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HBD238 - PNP EPITAXIAL PLANAR TRANSISTOR

This page provides the datasheet information for the HBD238, a member of the HBD238_Hi PNP EPITAXIAL PLANAR TRANSISTOR family.

Datasheet Summary

Description

The HBD238 is designed for medium power linear and switching applications.

Maximum Temperatures Storage Temperature -50 ~ +150 °C Junction Temperature +150 °C Maximum Maximum Power Dissipation Total Power Dissipation (Tc=25°C) 25 W

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Datasheet preview – HBD238

Datasheet Details

Part number HBD238
Manufacturer Hi-Sincerity Mocroelectronics
File Size 22.80 KB
Description PNP EPITAXIAL PLANAR TRANSISTOR
Datasheet download datasheet HBD238 Datasheet
Additional preview pages of the HBD238 datasheet.

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Full PDF Text Transcription

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HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6621-A Issued Date : 1994.09.08 Revised Date : 2000.10.01 Page No. : 1/2 HBD238 PNP EPITAXIAL PLANAR TRANSISTOR Description The HBD238 is designed for medium power linear and switching applications. Absolute Maximum Ratings (Ta=25°C) • Maximum Temperatures Storage Temperature ............................................................................................ -50 ~ +150 °C Junction Temperature ................................................................................... +150 °C Maximum • Maximum Power Dissipation Total Power Dissipation (Tc=25°C) .................................................................................... 25 W • Maximum Voltages and Currents BVCBO Collector to Base Voltage .........................
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