900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Toshiba Electronic Components Datasheet

C5319 Datasheet

2SC5319

No Preview Available !

TOSHIBA Transistor Silicon NPN Epitaxial Planar Type
2SC5319
2SC5319
VHF~UHF Band Low Noise Amplifier Applications
Low noise figure: NF = 1.3dB (f = 2 GHz)
High gain: S21e2 = 11.5dB (f = 2 GHz)
Absolute Maximum Ratings (Ta = 25°C)
Unit: mm
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 8 V
Collector-emitter voltage
VCEO 5 V
Emitter-base voltage
VEBO 1.5 V
Collector current
IC 20 mA
Base current
IB 10 mA
Collector power dissipation
PC 100 mW
Junction temperature
Tj 125 °C
1,3 EMITTER
Storage temperature range
Tstg
55 to 125
°C
2 COLLECTOR
4 BASE
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
JEDEC
reliability significantly even if the operating conditions (i.e.
JEITA
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
TOSHIBA
2-2K1A
Please design the appropriate reliability upon reviewing the
Weight: 6 mg (typ.)
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Microwave Characteristics (Ta = 25°C)
Characteristics
Symbol
Test Condition
Transition frequency
Insertion gain
Noise figure
fT
S21e2 (1)
S21e2 (2)
NF (1)
NF (2)
VCE = 3 V, IC = 15 mA
VCE = 3 V, IC = 15 mA, f = 1 GHz
VCE = 3 V, IC = 15 mA, f = 2 GHz
VCE = 3 V, IC = 5 mA, f = 1 GHz
VCE = 3 V, IC = 5 mA, f = 2 GHz
Electrical Characteristics (Ta = 25°C)
Min Typ. Max Unit
13 16 GHz
14.5 17
8.5 11.5
dB
0.9 1.8
dB
1.3 2.2
Characteristics
Symbol
Test Condition
Min
Collector cut-off current
Emitter cut-off current
DC current gain
Output capacitance
Reverse transfer capacitance
ICBO
IEBO
hFE
Cob
Cre
VCB = 6 V, IE = 0
VEB = 1 V, IC = 0
VCE = 3 V, IC = 15 mA
VCB = 2.5 V, IE = 0, f = 1 MHz (Note)
50
Note: Cre is measured by 3 terminal method with capacitance bridge.
1
Typ. Max Unit
1 μA
1 μA
250
0.6 pF
0.4 0.85 pF
2010-06-20


Toshiba Electronic Components Datasheet

C5319 Datasheet

2SC5319

No Preview Available !

Caution
This device is sensitive to electrostatic discharge. Please handle with caution.
Marking
4 3 Type Name
MT
12
2SC5319
2 2010-06-20


Part Number C5319
Description 2SC5319
Maker Toshiba
Total Page 6 Pages
PDF Download

C5319 Datasheet PDF

View PDF for Mobile








Similar Datasheet

1 C5310 VCXO Surface Mount Package Reflow Process Compatible AT-Cut Crystal
Vectron International
2 C5310 2SC5310
Sanyo Semicon Device
3 C5313 2SC5313
Toshiba
4 C5315 10 Gbit/s standard Sonet / SDH
Vectron International
5 C5319 2SC5319
Toshiba





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy