C5358 - NPN Transistor

Toshiba

Datasheet Details

Part number	C5358
Manufacturer	Toshiba
File Size	129.58 KB
Description	NPN Transistor
Datasheet	C5358 Datasheet
Additional preview pages of the C5358 datasheet.

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Full PDF Text Transcription

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TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SC5358 Power Amplifier Applications 2SC5358 Unit: mm • High breakdown voltage: VCEO = 230 V • Complementary to 2SA1986 • Suitable for use in 80-W high fidelity audio amplifier’s output stage Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 230 V Collector-emitter voltage VCEO 230 V Emitter-base voltage VEBO 5 V Collector current IC 15 A Base current IB 1.5 A Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range PC 150 W Tj 150 °C Tstg −55 to 150 °C JEDEC JEITA TOSHIBA ― ― 2-16C1A Note: Using continuously under heavy loads (e.g.

Published: Apr 22, 2015 |