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TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5460
Dynamic Focus Applications High-Voltage Switching Applications High-Voltage Amplifier Applications
2SC5460
Unit: mm
• High breakdown voltage: VCEO = 800 V
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO 800 V
Collector-emitter voltage
VCEO 800 V
Emitter-base voltage
VEBO 5 V
Collector current
IC 50 mA
Base current
IB 25 mA
Collector power dissipation
Ta = 25°C Tc = 25°C
PC
1.5 W
10
Junction temperature Storage temperature range
Tj 150 °C
Tstg
−55 to 150
°C
JEDEC JEITA
― ―
Note 1: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
TOSHIBA
2-8H1A
Weight: 0.82 g (typ.
C5460 Datasheet
