datasheet4u.com

900,000+ datasheet pdf search and download

Datasheet4U offers most rated semiconductors data sheet pdf




Toshiba Electronic Components Datasheet

C5548A Datasheet

2SC5548A

No Preview Available !

C5548A pdf
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SC5548A
High Voltage Switching Applications
Switching Regulator Applications
DC-DC Converter Applications
2SC5548A
Unit: mm
High speed switching: tr = 0.5 μs (max), tf = 0.3 μs (max) (IC = 0.8 A)
High collector breakdown voltage: VCEO = 400 V
High DC current gain: hFE = 40 (min) (IC = 0.2 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
DC
Pulse
Base current
Collector power
dissipation
Ta = 25°C
Tc = 25°C
Junction temperature
Storage temperature range
VCBO
VCEO
VEBO
IC
ICP
IB
PC
Tj
Tstg
600
400
7
2
4
0.5
1.0
15
150
55 to 150
V
V
V
A
A
W
°C
°C
JEDEC
JEITA
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.)
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test
report and estimated failure rate, etc).
1 2010-02-05


Toshiba Electronic Components Datasheet

C5548A Datasheet

2SC5548A

No Preview Available !

C5548A pdf
Electrical Characteristics (Ta = 25°C)
Characteristics
Collector cut-off current
Emitter cut-off current
Collector-base breakdown voltage
Collector-emitter breakdown voltage
DC current gain
Collector emitter saturation voltage
Base-emitter saturation voltage
Symbol
Test Condition
ICBO
IEBO
V (BR) CBO
V (BR) CEO
hFE (1)
hFE (2)
VCE (sat)
VBE (sat)
VCB = 480 V, IE = 0
VEB = 7 V, IC = 0
IC = 1 mA, IE = 0
IC = 10 mA, IB = 0
VCE = 5 V, IC = 1 mA
VCE = 5 V, IC = 0.2 A
IC = 0.8 A, IB = 0.1 A
IC = 0.8 A, IB = 0.1 A
2SC5548A
Min Typ. Max Unit
― ― 20 μA
― ― 10 μA
600
V
400
V
20 ― ―
40 100
― ― 1.0 V
― ― 1.3 V
Rise time
Switching time
Storage time
Fall time
tr 20 μs VCC 200 V
― ― 0.5
IB1 IC
tstg
IB2
IB21
OUT-
PUT
3.0 μs
INPUT
tf IB1 = 0.1 A, IB2 = 0.2 A
DUTY CYCLE 1%
― ― 0.3
Marking
C5548A
Part No. (or abbreviation code)
Lot No.
Note 1
Note 1:
A line under a Lot No. identifies the indication of product Labels.
Not underlined: [[Pb]]/INCLUDES > MCV
Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental matters such as the
RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and
of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in
electrical and electronic equipment.
2 2010-02-05


Part Number C5548A
Description 2SC5548A
Maker Toshiba
Total Page 5 Pages
PDF Download
C5548A pdf
C5548A Datasheet PDF
[partsNo] view html
View PDF for Mobile








Similar Datasheet

1 C5548 2SC5548 Toshiba
Toshiba
C5548 pdf
2 C5548A 2SC5548A Toshiba
Toshiba
C5548A pdf





Part Number Start With

0    1    2    3    4    5    6    7    8    9    A    B    C    D    E    F    G    H    I    J    K    L    M    N    O    P    Q    R    S    T    U    V    W    X    Y    Z

Site map

Webmaste! click here

Contact us

Buy Components

Privacy Policy