D1220
D1220 is 2SD1220 manufactured by Toshiba.
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process)
2SD1220
2SD1220
Power Amplifier Applications
Unit: mm
- plementary to 2SB905
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
Ta = 25°C Tc = 25°C
VCBO VCEO VEBO
IC IB
150 V 150 V
6V 1.5 A 1.0 A 1.0
W 10
Junction temperature
Tj 150 °C
Storage temperature range
Tstg
- 55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
JEDEC JEITA
― ― temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the
TOSHIBA
2-7J1A
Weight: 0.36 g (typ.) absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/”Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
1 2010-02-05
Electrical Characteristics (Ta =...
