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GT30J122A - Silicon N-Channel IGBT

Key Features

  • (1) 4th generation (2) Enhancement mode (3) High-speed switching : tf = 0.20 µs (typ. ) (IC = 50 A) (4) Low saturation voltage : VCE(sat) = 1.7 V (typ. ) (IC = 50 A) 3. Packaging and Internal Circuit GT30J122A TO-3P(N) 1 : Gate 2 : Collector 3 : Emitter Start of commercial production 2010-06 1 2014-01-07 Rev.2.0 GT30J122A 4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified) Characteristics Symbol Rating Unit Collector-emitter voltage Gate-emitter voltage Collecto.

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Datasheet Details

Part number GT30J122A
Manufacturer Toshiba
File Size 193.44 KB
Description Silicon N-Channel IGBT
Datasheet download datasheet GT30J122A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Discrete IGBTs Silicon N-Channel IGBT GT30J122A 1. Applications • Dedicated to Current-Resonant Inverter Switching Applications • Dedicated to Partial-Switching Power Factor Correction (PFC) Applications Note: The product(s) described herein should not be used for any other application. 2. Features (1) 4th generation (2) Enhancement mode (3) High-speed switching : tf = 0.20 µs (typ.) (IC = 50 A) (4) Low saturation voltage : VCE(sat) = 1.7 V (typ.) (IC = 50 A) 3. Packaging and Internal Circuit GT30J122A TO-3P(N) 1 : Gate 2 : Collector 3 : Emitter Start of commercial production 2010-06 1 2014-01-07 Rev.2.0 GT30J122A 4.