* (1) 4th generation (2) Enhancement mode (3) High-speed switching : tf = 0.20 µs (typ.) (IC = 50 A) (4) Low saturation voltage : VCE(sat) = 1.7 V (typ.) (IC = 50 A) 3. Packaging and Internal Circuit GT30J122A TO-3P(N) 1 : Gate 2 : Collector 3 : Emitter Start of commercial production 2010-06 1 2
GT30J122A Datasheet (193.44 KB)
GT30J122A
193.44 KB
Silicon n-channel igbt.
Discrete IGBTs Silicon N-Channel IGBT GT30J122A 1. Applications Dedicated to Current-Resonant Inverter Switching Applications Dedi.
📁 Related Datasheet
GT30J122 Silicon N-Channel IGBT (Toshiba Semiconductor)
GT30J121 Silicon N-Channel IGBT (Toshiba Semiconductor)
GT30J126 Silicon N-Channel IGBT (Toshiba)
GT30J127 600V 200A IGBT MOSFET (ETC)
GT30J101 Silicon N-Channel IGBT (Toshiba Semiconductor)
GT30J110SRA Silicon N-Channel IGBT (Toshiba)
GT30J301 N-Channel IGBT (Toshiba Semiconductor)
GT30J311 N-Channel IGBT (Toshiba Semiconductor)
GT30J322 Silicon N-Channel IGBT (Toshiba Semiconductor)
GT30J324 Silicon N-Channel IGBT (Toshiba Semiconductor)
