GT30J122A
Features
(1) 4th generation (2) Enhancement mode (3) High-speed switching : tf = 0.20 µs (typ.) (IC = 50 A) (4) Low saturation voltage : VCE(sat) = 1.7 V (typ.) (IC = 50 A)
3. Packaging and Internal Circuit
TO-3P(N)
1 : Gate 2 : Collector 3 : Emitter
Start of mercial production
2010-06
2014-01-07
Rev.2.0
4. Absolute Maximum Ratings (Note) (Ta = 25, unless otherwise specified)
Characteristics
Symbol
Rating
Unit
Collector-emitter voltage Gate-emitter voltage Collector current (DC) Collector current (1 ms) Collector power dissipation Junction temperature Storage temperature Mounting torque
(Tc = 25)
VCES VGES
IC ICP PC Tj Tstg TOR
600 ±25 30 100 120 150 -55 to 150 0.8
V A W Nm
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating...
