| Part number | GT30J126 |
|---|---|
| Datasheet | GT30J126_Toshiba.pdf |
| File Size | 208.62 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
|
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GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): tf = 0.05 μs (typ.) Low switching loss : Eoff = 0.80 mJ (typ.) Low saturation voltage:.
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