| Part number | GT30J126 |
|---|---|
| Download | GT30J126 Datasheet (PDF) |
| File Size | 208.62 KB |
| Manufacturer | Toshiba |
| Description | Silicon N-Channel IGBT |
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| Part Number | Description |
|---|---|
| GT30J122A | Silicon N-Channel IGBT |
| GT30J110SRA | Silicon N-Channel IGBT |
| GT30J341 | Silicon N-Channel IGBT |
| GT30J65MRB | Silicon N-Channel IGBT |
| GT30N135SRA | Silicon N-Channel IGBT |
GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications Fourth-generation IGBT Enhancement mode type Fast switching (FS): tf = 0.05 μs (typ.) Low switching loss : Eoff = 0.80 mJ (typ.) Low saturation voltage:.
