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GT30J126 - Silicon N-Channel IGBT

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GT30J126 TOSHIBA Insulated Gate Bipolar Transistor Silicon N Channel IGBT GT30J126 High Power Switching Applications Fast Switching Applications • • • Fourth-generation IGBT Enhancement mode type Fast switching (FS): High speed: tf = 0.05 μs (typ.) Low switching loss : Eon = 1.00 mJ (typ.) : Eoff = 0.80 mJ (typ.) • Low saturation voltage: VCE (sat) = 1.95 V (typ.) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristics Collector-emitter voltage Gate-emitter voltage Collector current Collector power dissipation (Tc = 25°C) Junction temperature Storage temperature range DC 1 ms Symbol VCES VGES IC ICP PC Tj Tstg Rating 600 ±20 30 60 90 150 −55 to 150 Unit V V A W °C °C JEDEC JEITA TOSHIBA ― ― 2-16F1A Weight: 5.8 g (typ.) Note: Using continuously under heavy loads (e.g.
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