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GT30N135SRA - Silicon N-Channel IGBT

Features

  • (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode (FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.25 µs (typ. ) (IC = 60 A) (5) Low saturation voltage: VCE(sat) = 1.65 V (typ. ) (IC = 30 A, Ta = 25.
  • ) (6) High junction temperature: Tj = 175.
  • (max) 3. Packaging and Internal Circuit TO-247 1: Gate 2: Collector(Heatsink) 3: Emitter ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial.

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Discrete IGBTs Silicon N-Channel IGBT GT30N135SRA GT30N135SRA 1. Applications • Dedicated to Voltage-Resonant Inverter Switching Applications • Dedicated to Soft Switching Applications • Dedicated to Induction Cooktops and Home Appliance Applications Note: The product(s) described herein should not be used for any other application. Note 1: This transistor is sensitive to electrostatic discharge and should be handled with care. 2. Features (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode (FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.25 µs (typ.) (IC = 60 A) (5) Low saturation voltage: VCE(sat) = 1.65 V (typ.) (IC = 30 A, Ta = 25 �) (6) High junction temperature: Tj = 175 � (max) 3.
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