• Part: GT30N135SRA
  • Description: Silicon N-Channel IGBT
  • Manufacturer: Toshiba
  • Size: 559.98 KB
Download GT30N135SRA Datasheet PDF
GT30N135SRA page 2
Page 2
GT30N135SRA page 3
Page 3

Datasheet Summary

Discrete IGBTs Silicon N-Channel IGBT 1. Applications - Dedicated to Voltage-Resonant Inverter Switching Applications - Dedicated to Soft Switching Applications - Dedicated to Induction Cooktops and Home Appliance Applications Note: The product(s) described herein should not be used for any other application. Note 1: This transistor is sensitive to electrostatic discharge and should be handled with care. 2. Features (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode (FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.25 µs (typ.) (IC = 60 A) (5) Low saturation voltage: VCE(sat) = 1.65 V...