Datasheet Summary
Discrete IGBTs Silicon N-Channel IGBT
1. Applications
- Power Factor Correction (PFC)
2. Features
(1) 7th generation (2) The RC-IGBT consists of a freewheeling diode (FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: tf = 40 ns (typ.) (IC = 15 A, RG = 56 Ω) (5) Low saturation voltage: VCE(sat) = 1.40 V (typ.) (IC = 30 A) (6) High junction temperature: Tj = 175
- (max)
3. Packaging and Internal Circuit
TO-3P(N)
1: Gate 2: Collector (Heatsink) 3: Emitter
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Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2022-12
2022-09-21 Rev.1.0
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