GT30J65MRB Datasheet Silicon N-Channel IGBT

Manufacturer: Toshiba

Overview: Discrete IGBTs Silicon N-Channel IGBT GT30J65MRB GT30J65MRB 1. Applications • Power Factor Correction (PFC) 2.

Datasheet Details

(1) 7th generation (2) The RC-IGBT consists of a freewheeling diode (FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: tf = 40 ns (typ. ) (IC = 15 A, RG = 56 Ω) (5) Low saturation voltage: VCE(sat) = 1.40 V (typ. ) (IC = 30 A) (6) High junction temperature: Tj = 175.
(max) 3. Packaging and Internal Circuit TO-3P(N) 1: Gate 2: Collector (Heatsink) 3: Emitter ©2022 1 Toshiba Electronic Devices & Storage Corporation Start of commercial productio.