• Part: GT30J110SRA
  • Description: Silicon N-Channel IGBT
  • Manufacturer: Toshiba
  • Size: 539.97 KB
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Datasheet Summary

Discrete IGBTs Silicon N-Channel IGBT 1. Applications - Dedicated to Voltage-Resonant Inverter Switching Applications - Dedicated to Soft Switching Applications - Dedicated to Induction Cooktops and Home Appliance Applications Note: The product(s) described herein should not be used for any other application. 2. Features (1) 6.5th generation (2) The RC-IGBT consists of a freewheeling diode (FWD) monolithically integrated in an IGBT chip. (3) Enhancement mode (4) High-speed switching: IGBT tf = 0.17 µs (typ.) (IC = 60 A) (5) Low saturation voltage: VCE(sat) = 1.60 V (typ.) (IC = 30 A, Ta = 25 - ) (6) High junction temperature: Tj = 175 - (max) 3. Packaging and...