(1) Sixth generation (2) Enhancement mode (3) High-speed switching: tf = 0.20 µs (typ.) (IC = 40 A) (4) Low saturation voltage: VCE(sat) = 1.45 V (typ.) (IC = 40 A) (5) T.

* Dedicated to Current-Resonant Inverter Switching Applications
* Dedicated to Partial-Switching Power Factor Co.

Silicon N-Channel IGBT

GT40J321

GT40J322

GT400P10

GT400P10T

GT40G121

GT40M101

GT40M301

GT40Q321

GT40Q322

GT40Q323

GT40QR21

GT40RR21

GT40T101

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