* (1) Sixth generation (2) Enhancement mode (3) High-speed switching: tf = 0.20 µs (typ.) (IC = 40 A) (4) Low saturation voltage: VCE(sat) = 1.45 V (typ.) (IC = 40 A) (5) TO-3P(N)IS (Toshiba package name) 3. Packaging and Internal Circuit GT40J121 TO-3P(N)IS 1: Gate 2: Collector 3: Emitter Start o
GT40J121 Datasheet (240.66 KB)
GT40J121
240.66 KB
Silicon n-channel igbt.
Discrete IGBTs Silicon N-Channel IGBT GT40J121 1. Applications Dedicated to Current-Resonant Inverter Switching Applications Dedic.
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