HN1C03F - Silicon NPN Epitaxial Type Transistor

Toshiba

Datasheet Details

Part number	HN1C03F
Manufacturer	Toshiba
File Size	368.05 KB
Description	Silicon NPN Epitaxial Type Transistor
Datasheet	HN1C03F Datasheet

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C03F For Muting And Switching Applications z Including two devices in SM6 (Super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA) z Low on resistance: RON = 1Ω (typ.)(IB = 5mA) HN1C03F Unit: mm Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 20 V Emitter-base voltage VEBO 25 V Collector current Base current Collector power dissipation Junction temperature IC 300 mA JEDEC ― IB 60 mA JEITA ― PC* 300 mW TOSHIBA 2-3N1A Tj 150 °C Weight: 0.015g (typ.