| Part number | HN1C03F |
|---|---|
| Datasheet | HN1C03F-Toshiba.pdf |
| File Size | 368.05 KB |
| Manufacturer | Toshiba |
| Description | Silicon NPN Epitaxial Type Transistor |
|
|
TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C03F For Muting And Switching Applications z Including two devices in SM6 (Super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA) z Low on resistance:.
| Part Number | Description |
|---|---|
| HN1C03FU | Silicon NPN Epitaxial Type Transistor |
| HN1C01F | Silicon NPN Epitaxial Type Transistor |
| HN1C01FE | Silicon NPN Epitaxial Type Transistor |
| HN1C01FU | Silicon NPN Epitaxial Type Transistor |
| HN1C07F | Silicon NPN Epitaxial Type Transistor |
| HN1A01F | Silicon PNP Epitaxial Type Transistor |
| HN1A01FE | Silicon PNP Epitaxial Type Transistor |
| HN1A01FU | Silicon PNP Epitaxial Type Transistor |
| HN1A02F | Silicon PNP Epitaxial Type Transistor |
| HN1A07F | Silicon PNP Epitaxial Type Transistor |
