HN1C07F - Silicon NPN Epitaxial Type Transistor

Toshiba

Datasheet Details

Part number	HN1C07F
Manufacturer	Toshiba
File Size	145.97 KB
Description	Silicon NPN Epitaxial Type Transistor
Datasheet	HN1C07F Datasheet

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TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C07F HN1C07F Audio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications Unit: mm z Excellent Currrent gain(hFE ) linearity : hFE(2) = 25 (min) at VCE = 6V, IC = 400mA Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO 50 V Collector-emitter voltage VCEO 50 V Emitter-base voltage Collector current Base current Collector power dissipation VEBO IC IB PC* 5 V 500 mA 50 mA 300 mW 1.EMITTER1 (E1) 2.BASE1 (B1) 3.COLLECTOR2 (C2) 4.EMITTER2 (E2) 5.BASE2 (B2) 6.