• Part: HN1C03F
  • Manufacturer: Toshiba
  • Size: 368.05 KB
Download HN1C03F Datasheet PDF
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HN1C03F Description

TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C03F For Muting And Switching Applications z Including two devices in SM6 (Super mini type with 6 leads) z High emitter-base voltage: VEBO = 25V (min) z High reverse hFE: reverse hFE = 150 (typ.)(VCE =−2V, IC =−4mA) z Low on resistance:.