• Part: HN1C01FE
  • Description: Silicon NPN Epitaxial Type Transistor
  • Manufacturer: Toshiba
  • Size: 293.27 KB
Download HN1C01FE Datasheet PDF
Toshiba
HN1C01FE
HN1C01FE is Silicon NPN Epitaxial Type Transistor manufactured by Toshiba.
Bipolar Transistors Silicon NPN Epitaxial Type 1. Applications - Low-Frequency Amplifiers 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) Small package (Dual type) (3) High voltage: VCEO = 50 V (4) High collector current: IC = 150 mA (max) (5) High hFE: hFE = 120 to 400 (6) Excellent hFE linearity: hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) 3. Packaging and Internal Circuit ES6 1: Emitter1 2: Base1 3: Collector2 4: Emitter2 5: Base2 6: Collector1 ©2021 Toshiba Electronic Devices & Storage Corporation Start of mercial production 2000-05 2021-08-18 Rev.1.0 4. Orderable part number Orderable part number AEC-Q101...