The HN1C07F is a NPN Silicon Epitaxial Transistor.
| Max Operating Temp | 150 °C |
|---|
| Part Number | HN1C07F Datasheet |
|---|---|
| Manufacturer | Kexin Semiconductor |
| Overview | SMD Type TransistIoCrs NPN Silicon Epitaxial Transistor HN1C07F Features Excellent Current Gain(hFE)linearity :hFE=25(min) at VCE=6V,IC=400mA Unit: mm 1 pin mark Absolute Maximum Ratings Ta = 25. Excellent Current Gain(hFE)linearity :hFE=25(min) at VCE=6V,IC=400mA Unit: mm 1 pin mark Absolute Maximum Ratings Ta = 25 Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current power dissipation Junction temperature Storage temperature Sym. |
| Part Number | HN1C07F Datasheet |
|---|---|
| Description | Silicon NPN Epitaxial Type Transistor |
| Manufacturer | Toshiba |
| Overview | TOSHIBA Transistor Silicon NPN Epitaxial Type (PCT Process) HN1C07F HN1C07F Audio Frequency Small Power Amplifier Applications Driver Stage Amplifier Applications Switching applications Unit: mm z. t to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precaution. |
| Seller | Inventory | Price Breaks | Buy |
|---|---|---|---|
| Win Source | 72000 | 345+ : 0.1686 USD 835+ : 0.1386 USD 1295+ : 0.134 USD 1790+ : 0.1294 USD |
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