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HN2E04F - MULTI CHIP DISCRETE DEVICE

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Datasheet Details

Part number HN2E04F
Manufacturer Toshiba
File Size 572.15 KB
Description MULTI CHIP DISCRETE DEVICE
Datasheet download datasheet HN2E04F Datasheet

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TOSHIBA MULTI CHIP DISCRETE DEVICE HN2E04F HN2E04F Super High Speed Switching Application Audio Frequency Amplifier Application Audio Low Noise Amplifier Application Q1 High Voltage : VCEO = −120V High DC Current Gain : hFE = 200 to 700 Good hFE Linearity Q2 : hFE(IC =− 0.1mA)/ hFE(IC =− 2mA) = 0.95 Low Forward Voltage Drop : VF(3) = 0.98V (typ.) Fast Reverse Recovery Time : trr = 1.6ns (typ.) Low Total Capacitance : CT = 0.5pF (typ.