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Title
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Description
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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process)
HN4A08J
HN4A08J
Low Frequency Power Amplifer Applications Power Switching Application
Unit: mm
z High DC Current Gain : hFE = 100 to 320 z Low Saturation Voltage : VCE(sat) = −0.4V (max)
(IC = −500mA , IB = −20mA)
Absolute Maximum Ratings (Ta = 25°C)
(Q1, Q2 Common)
Characteristic
Symbol
Rating
Unit
Collector-base voltage
VCBO
...
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Features
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ditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba
JEDEC
―
JEITA
―
TOSHIBA
2-3L1A
Weight: 0.014g (typ.)
Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual
reliability d...
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Datasheet
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 HN4A08J Datasheet - 223.97KB |
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Distributor
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Stock
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In stock
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Price
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BuyNow
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 - Manufacturer a
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