HN4A08J - Silicon PNP Epitaxial Type Transistor

Toshiba

Datasheet Details

Part number	HN4A08J
Manufacturer	Toshiba
File Size	223.97 KB
Description	Silicon PNP Epitaxial Type Transistor
Datasheet	HN4A08J Datasheet

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TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) HN4A08J HN4A08J Low Frequency Power Amplifer Applications Power Switching Application Unit: mm z High DC Current Gain : hFE = 100 to 320 z Low Saturation Voltage : VCE(sat) = −0.4V (max) (IC = −500mA , IB = −20mA) Absolute Maximum Ratings (Ta = 25°C) (Q1, Q2 Common) Characteristic Symbol Rating Unit Collector-base voltage VCBO −30 V Collector-emitter voltage VCEO −25 V Emitter-base voltage VEBO −5 V Collector current IC −800 mA Base current IB −160 mA Collector power dissipation Junction temperature Storage temperature range PC* 300 mW Tj 150 °C Tstg −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high 1.BASE1 (B1) 2.EMITTER (E) 3.BASE2 (B2) 4.