HN4D01JU Datasheet | Toshiba

TOSHIBA Diode Silicon Epitaxial Planar Type Ultra High Speed Switching Applications z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance : CT = 2.2p F (typ.) Absolute Maximum Ratings (Ta = 25°C) Unit: mm Characteristic Symbol Rating Unit Maximum (peak) reverse voltage Reverse voltage Maximum (peak) forward current Average forward current Surge current (10ms) Power dissipation VRM VR IFM IO IFSM P 300- m A 100- m A 2- 200- - m W Junction temperature Storage temperature Tj °C Tstg - 55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). - : Unit rating. Total rating = unit rating × 1.5 - - :Total rating JEDEC ― EIAJ ― TOSHIBA ― Weight: 0.0062 g (typ.) Electrical Characteristics (Ta = 25°C) Characteristic Forward voltage Reverse current Total capacitance Reverse recovery...