HN4D01JU Description
TOSHIBA Diode Silicon Epitaxial Planar Type HN4D01JU HN4D01JU Ultra High Speed Switching Applications z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance.
| Part number | HN4D01JU |
|---|---|
| Download | HN4D01JU Datasheet (PDF) |
| File Size | 217.52 KB |
| Manufacturer | Toshiba |
| Description | Silicon Epitaxial Planar Type Diode |
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| Part Number | Description |
|---|---|
| HN4D02JU | Silicon Epitaxial Planar Type Diode |
| HN4A06J | Silicon PNP Epitaxial Type Transistor |
| HN4A08J | Silicon PNP Epitaxial Type Transistor |
| HN4A51J | Silicon PNP Epitaxial Type Transistor |
| HN4A56JU | Silicon PNP Epitaxial Type Transistor |
TOSHIBA Diode Silicon Epitaxial Planar Type HN4D01JU HN4D01JU Ultra High Speed Switching Applications z Low forward voltage : VF (3) = 0.92V (typ.) z Fast reverse recovery time : trr = 1.6ns (typ.) z Small total capacitance.