Full PDF Text Transcription for K15H50C (Reference)
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K15H50C. For precise diagrams, and layout, please refer to the original PDF.
TK15H50C TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI) TK15H50C ○ Switching Regulator Applications • • • • Low drain−source ON resistance Low leak...
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Regulator Applications • • • • Low drain−source ON resistance Low leakage current Enhancement mode : RDS (ON) = 0. 33 Ω (typ.) High forward transfer admittance : |Yfs| = 8.5 S (typ.) : IDSS = 100 µA (max) (VDS = 500 V) : Vth = 2.0~4.0 V (VDS = 10 V, I45D = 1 mA) Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Drain−source voltage Drain−gate voltage (RGS = 20 kΩ) Gate−source voltage Drain current DC (Note 1) Symbol VDSS VDGR VGSS ID IDP PD EAS IAR EAR Tch Tstg Rating 500 500 ±30 15 60 150 765 15 15 150 −55~150 Unit V V V A A W mJ A mJ °C °C Pulse (Note 1) 1: GATE 2: DRAIN (HEAT SINK) 3: SOURCE JEDEC JEITA TOSHI
K15H50C Datasheet
