Datasheet4U Logo Datasheet4U.com

K4106 2SK4106

K4106 Description

2SK4106 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSVI) 2SK4106 Switching Regulator Applications Unit: mm * *

K4106 Features

* an life, bodily injury, serious property damag

K4106 Applications

* Unit: mm
* Low drain-source ON resistance: RDS (ON) = 0.4 Ω (typ. ) High forward transfer admittance: |Yfs| = 8.5 S (typ. ) Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) Absolute Maximum Rating

📥 Download Datasheet

Preview of K4106 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • K4100LS - 2SK4100LS (Sanyo Semicon Device)
  • K4101LS - 2SK4101LS (Sanyo)
  • K4107 - 2SK4107 (Toshiba Semiconductor)
  • K4108 - 2SK4108 (Toshiba Semiconductor)
  • K4115 - 2SK4115 (Toshiba Semiconductor)
  • K4119LS - 2SK4119LS (Sanyo Semicon Device)
  • K412 - Silicon N-Channel MOSFET (Hitachi)
  • K4123LS - 2SK4123LS (Sanyo)

📌 All Tags

2SK4106 Toshiba
Toshiba K4106-like datasheet