. The Collector is Isolated from Ground. . High DC Current Gain : hFE=100(Min. ) (Ic=50A)
. Low Saturation Voltage : VcE(sat)=2V(Max. ) (Ic=50A)
. High Speed
: tf=2/.
Full PDF Text Transcription for MG50G1BL2 (Reference)
Note: Below is a high-fidelity text extraction (approx. 800 characters) for
MG50G1BL2. For precise diagrams, and layout, please refer to the original PDF.
:1 mmm A1 SILICON NPN TRIPLE DIFFUSED TYPE (DARLINGTON POWER MODULE) HIGH POWER SWITCHING APPLICATIONS. FEATURES . The Collector is Isolated from Ground. . High DC Curren...
View more extracted text
NS. FEATURES . The Collector is Isolated from Ground. . High DC Current Gain : hFE=100(Min. ) (Ic=50A) . Low Saturation Voltage : VcE(sat)=2V(Max. ) (Ic=50A) . High Speed : tf=2/*s(Max.) (Ic=50A) Unit in mm MAXIMUM RATINGS (Tc=25°C) CHARACTERISTIC SYMBOL RATING UNIT Collector-Base Voltage VcBO 600 V Collector-Emitter Voltage VCEO(SUS) 450 V t ^P I *f*3 Emitter-Base Voltage Vebo 6V DC ic 50 A Pulse ICP 100 A Base Current IB 3 A cjx 1. BASE 2. COLLECTOR 3. EMITTER Collector Power Dissipation (Tc=25°C) Junction Temperature Storage Temperature Range Isolation Voltage PC 300 W Tj T stg Visol 150 -40-125 2000 (AC 1 Minute) °C °c