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RN2712JE - Silicon PNP Epitaxial Type Transistor

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RN2712JE,RN2713JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2712JE, RN2713JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm z Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. z Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. z A wide range of resistor values is available for use in various circuits. Equivalent Circuit 1.BASE1 (B1) 2.EMITTER (E) 3.BASE2 (B2) 4.COLLECTOR2 (C2) 5.COLLECTOR1 (C1) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating JEDEC ― JEITA ― TOSHIBA 2-2P1D Unit Weight: 0.003g(typ.
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