RN2713JE
RN2712JE,RN2713JE
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor)
RN2712JE, RN2713JE
Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
Unit : mm z Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. z Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more pact equipment and lowers assembly cost. z A wide range of resistor values is available for use in various circuits.
Equivalent Circuit
1.BASE1
(B1)
2.EMITTER (E)
3.BASE2
(B2)
4.COLLECTOR2 (C2)
5.COLLECTOR1 (C1)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
JEDEC
―
JEITA
―
TOSHIBA
2-2P1D
Unit
Weight: 0.003g(typ.)
Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector power dissipation Junction temperature Storage temperature range
VCBO VCEO VEBO
IC PC
- Tj Tstg
- 50
-...
