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RN2713JE Toshiba (https://www.toshiba.com/) Silicon PNP Epitaxial Type Transistor

Toshiba
Description RN2712JE,RN2713JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2712JE, RN2713JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm z Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. z Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count en...
Features V −5 V −100 mA 100 mW 150 °C −55 to 150 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage...

Datasheet PDF File RN2713JE Datasheet 274.92KB

RN2713JE   RN2713JE   RN2713JE  




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