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RN2713JE - Silicon PNP Epitaxial Type Transistor

Download the RN2713JE datasheet PDF. This datasheet also covers the RN2712JE variant, as both devices belong to the same silicon pnp epitaxial type transistor family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (RN2712JE-Toshiba.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number RN2713JE
Manufacturer Toshiba
File Size 274.92 KB
Description Silicon PNP Epitaxial Type Transistor
Datasheet download datasheet RN2713JE Datasheet

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Other Datasheets by Toshiba

Part Number Description
RN2710 Silicon PNP Epitaxial Type Transistor
RN2710JE Silicon PNP Epitaxial Type Transistor
RN2711 Silicon PNP Epitaxial Type Transistor
RN2711JE Silicon PNP Epitaxial Type Transistor
RN2712JE Silicon PNP Epitaxial Type Transistor

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
RN2712JE,RN2713JE TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) (Bias Resistor built-in Transistor) RN2712JE, RN2713JE Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications Unit : mm z Two devices are incorporated into an Extreme-Super-Mini (5 pin) package. z Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enables the manufacture of ever more compact equipment and lowers assembly cost. z A wide range of resistor values is available for use in various circuits. Equivalent Circuit 1.BASE1 (B1) 2.EMITTER (E) 3.BASE2 (B2) 4.COLLECTOR2 (C2) 5.COLLECTOR1 (C1) Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating JEDEC ― JEITA ― TOSHIBA 2-2P1D Unit Weight: 0.003g(typ.
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