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S1806 Toshiba (https://www.toshiba.com/) Silicon PNP Transistor

Toshiba
Description SILICON PHP EPITAXIAL TYPE (PCT PROCESS) . F S1806 DESIGNED FOR USE IN AUDIO STAGE MEDIUM POWER AMPLIFIER. RECOMMENDED FOR OUTPUT AMPLIFIER STAGE IN CLASS B PUSH-PULL OPERATION. LOW FREQUENCY, MEDIUM POWER AMPLIFIERSDRIVER STAGE AMPLIFIERS. FEATIT?ES: . Excellent h FE vs. Collector Current Characteristics, hFE(2)=23Min. at VCE =-1V, I c =-400mA . Complementary to S1805. 5.1 MAX. Unit in mm ...
Features h FE(2) VCE(sat) VCE =1V, I c =-50mA VCE =-1V, I c =-400mA I c =-100mA, T B =-5mA vBE(sat) I C =-100mA, I B =-5mA Base-Emitter Voltage Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage VBE Vce=-1V, I c =-50mA v (BR) CBO l"C=-0.1mA, I E =0 v (BR) CEO I C =-lmA, I B =0 Collector Cut-off Current Emitter Cut-off Current : CB...

Datasheet PDF File S1806 Datasheet 81.26KB

S1806   S1806   S1806  




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