SSM3J35AFS Datasheet Silicon P-Channel MOSFET

Manufacturer: Toshiba

Datasheet Details

MOSFETs Silicon P-Channel MOS SSM3J35AFS 1.

Applications • Analog Switches 2.

(1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 3.2 Ω (typ. ) (@VGS = -1.2 V) RDS(ON) = 2.3 Ω (typ. ) (@VGS = -1.5 V) RDS(ON) = 2.0 Ω (typ. ) (@VGS = -1.8 V) RDS(ON) = 1.5 Ω (typ. ) (@VGS = -2.5 V) RDS(ON) = 1.1 Ω (typ. ) (@VGS = -4.5 V) 3. Packaging and Internal Circuit SSM SSM3J35AFS 1: Gate 2: Source 3: Drain ©2017-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2017-03 2021-02-01 Rev.3.0 SSM3J35AFS 4. Absolute Maximum Ratings (Note) (Un.

Part Number	Description	Manufacturer
SSM3J353F	Silicon P-Channel MOSFET	Toshiba Semiconductor
SSM3J35CT	Silicon P-Channel MOSFET	Toshiba Semiconductor
SSM3J35FS	Silicon P-Channel MOSFET	Toshiba Semiconductor
SSM3J35MFV	Silicon P-Channel MOSFET	Toshiba Semiconductor