Field-Effect Transistor Silicon P-Channel MOS Type
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SSM3J35MFV
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J35MFV
○ High-Speed Switching Applications ○ Analog Switch Applications
• 1.2 V drive • Low ON-resistance : Ron = 44 Ω (max) (@VGS = -1.2 V)
: Ron = 22 Ω (max) (@VGS = -1.5 V) : Ron = 11 Ω (max) (@VGS = -2.5 V) : Ron = 8 Ω (max) (@VGS = -4.0 V)
1.2±0.05 0.8±0.05 0.4 0.4
0.22±0.05
Unit: mm
0.32±0.05
1.2±0.05 0.8±0.05
1
2
3
0.13±0.05
Absolute Maximum Ratings (Ta = 25˚C)
0.5±0.
SSM3J35MFV Datasheet
