SSM3J358R
SSM3J358R is Silicon P-Channel MOSFET manufactured by Toshiba.
MOSFETs Silicon P-Channel MOS
1. Applications
- Power Management Switches
2. Features
(1) 1.8 V drive (2) Low drain-source on-resistance
: RDS(ON) = 49.3 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 32.8 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 27.7 mΩ (max) (@VGS = -3.6 V) RDS(ON) = 25.3 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 22.1 mΩ (max) (@VGS = -8 V)
3. Packaging and Pin Assignment
SOT-23F
1: Gate 2: Source 3: Drain
©2016 Toshiba Corporation
Start of mercial production
2016-11
2017-01-24 Rev.2.0
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