SSM3J352F
SSM3J352F is Silicon P-Channel MOSFET manufactured by Toshiba.
MOSFETs Silicon P-Channel MOS (U-MOS)
1. Applications
- Power Management Switches
2. Features
(1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 443 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 199 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 136 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 110 mΩ (max) (@VGS = -10 V)
3. Packaging and Pin Assignment
S-Mini
1: Gate 2: Source 3: Drain
©2016 Toshiba Corporation
Start of mercial production
2015-12
2016-12-19 Rev.2.0
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