Field-Effect Transistor Silicon P-Channel MOS Type
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SSM3J35FS
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J35FS
○ High-Speed Switching Applications ○ Analog Switch Applications
• 1.2 V drive • Low ON-resistance : Ron = 44 Ω (max) (@VGS = -1.2 V)
: Ron = 22 Ω (max) (@VGS = -1.5 V) : Ron = 11 Ω (max) (@VGS = -2.5 V) : Ron = 8 Ω (max) (@VGS = -4.0 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25˚C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
VDSS
-20
V
Gate–source voltage
VGSS
±10
V
Drain current
DC
ID
Pulse
IDP
-100 mA
-200
Drain power dissipation
PD
100
mW
JEDEC
-
Channel temperature
Tch
150
°C
JEITA
-
Storage temperature
Tstg
-55 to 150
°C
TOSHIBA
2-2H1S
Note: Using continuously under heavy loads (e.g.
SSM3J35FS Datasheet
