The following content is an automatically extracted verbatim text
from the original manufacturer datasheet and is provided for reference purposes only.
View original datasheet text
SSM3J307T
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type (U-MOSV)
SSM3J307T
○ Power Management Switch Applications ○ High-Speed Switching Applications
• 1.5 V drive • Low ON-resistance: Ron = 83 mΩ (max) (@VGS = -1.5 V)
Ron = 56 mΩ (max) (@VGS = -1.8 V) Ron = 40 mΩ (max) (@VGS = -2.5 V) Ron = 31 mΩ (max) (@VGS = -4.5 V)
Absolute Maximum Ratings (Ta = 25°C)
2.9±0.2 1.9±0.2 0.95 0.95
+0.2 2.8-0.3
+0.2 1.6-0.1
Unit: mm
0.4±0.1
１
２
３
0～0.1 0.15
0.16±0.05
Characteristic
Symbol
Rating
Unit
0.7±0.05
Drain-Source voltage
VDSS
-20
V
Gate-Source voltage
VGSS
±8
V
Drain current
DC
ID (Note 1)
-5.
SSM3J307T Datasheet
