SSM3J306T Description
SSM3J306T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J306T Power management switch Applications 4 V drive Low ON-resistance: Ron = 225 mΩ (max) (@VGS = −4 V) Ron = 117 mΩ (max) (@VGS = −10 V) Unit: mm Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain source voltage VDS −30 V Gate source voltage VGSS ± 20 V Drain current DC ID Pulse IDP −2.4 A −4.8 Drain power dissipation PD (Note 1) 700...