SSM3J306T datasheet by Toshiba.
| Part number | SSM3J306T |
|---|---|
| Datasheet | SSM3J306T_ToshibaSemiconductor.pdf |
| File Size | 197.70 KB |
| Manufacturer | Toshiba |
| Description | Silicon P-Channel MOSFET |
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SSM3J306T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J306T Power management switch Applications 4 V drive Low ON-resistance: Ron = 225 mΩ (max) (@VGS = −4 V) Ron = 117 mΩ (max) (@VGS = −10 V) Unit: mm Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Drain source voltage VDS −30 V Gate source voltage VGSS ± 20 V Drain current DC ID Pulse IDP −2.4 A −4.8 Drain power dissipation PD (Note 1) 700...
| Part Number | Description |
|---|---|
| SSM3J304T | Silicon P-Channel MOSFET |
| SSM3J305T | Field-Effect Transistor Silicon P-Channel MOS Type |
| SSM3J307T | Silicon P-Channel MOSFET |
| SSM3J317T | Power Management Switch Applications High-Speed Switching Applications |
| SSM3J321T | Silicon P-Channel MOSFET |
| SSM3J325F | Silicon P-Channel MOSFET |
| SSM3J327F | Silicon P-Channel MOSFET |
| SSM3J327R | Silicon P-Channel MOSFET |
| SSM3J328R | Silicon P-Channel MOSFET |
| SSM3J331R | Silicon P-Channel MOSFET |
