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SSM3J306T
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J306T
Power management switch Applications
• 4 V drive • Low ON-resistance:
Ron = 225 mΩ (max) (@VGS = −4 V) Ron = 117 mΩ (max) (@VGS = −10 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drain–source voltage
VDS
−30
V
Gate–source voltage
VGSS
± 20
V
Drain current
DC
ID
Pulse
IDP
−2.4 A
−4.8
Drain power dissipation
PD (Note 1)
700
mW
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
−55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.
SSM3J306T Datasheet
