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SSM3J304T
TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type
SSM3J304T
○ Power Management Switch Applications ○ High-Speed Switching Applications
• 1.8-V drive • Low ON-resistance: RDS(ON) = 297 mΩ (max) (@VGS = -1.8 V)
RDS(ON) = 168 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 127 mΩ (max) (@VGS = -4.0 V)
Absolute Maximum Ratings (Ta = 25˚C)
Unit: mm
Characteristic
Symbol
Rating
Unit
Drain-source voltage
VDS
-20
V
Gate-source voltage
VGSS
±8
V
Drain current
DC
ID
Pulse
IDP
-2.3 A
-4.6
Power dissipation
PD (Note 1)
700
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to 150
°C
Note:
Using continuously under heavy loads (e.g.
SSM3J304T Datasheet
