SSM3J304T datasheet by Toshiba.
| Part number | SSM3J304T |
|---|---|
| Datasheet | SSM3J304T_ToshibaSemiconductor.pdf |
| File Size | 267.93 KB |
| Manufacturer | Toshiba |
| Description | Silicon P-Channel MOSFET |
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SSM3J304T TOSHIBA Field-Effect Transistor Silicon P-Channel MOS Type SSM3J304T ○ Power Management Switch Applications ○ High-Speed Switching Applications 1.8-V drive Low ON-resistance: RDS(ON) = 297 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 168 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 127 mΩ (max) (@VGS = -4.0 V) Ratings (Ta = 25˚C) Unit: mm Characteristic Symbol Rating Unit Drain-source voltage VDS -20 V Gate-source voltage...
| Part Number | Description |
|---|---|
| SSM3J305T | Field-Effect Transistor Silicon P-Channel MOS Type |
| SSM3J306T | Silicon P-Channel MOSFET |
| SSM3J307T | Silicon P-Channel MOSFET |
| SSM3J317T | Power Management Switch Applications High-Speed Switching Applications |
| SSM3J321T | Silicon P-Channel MOSFET |
| SSM3J325F | Silicon P-Channel MOSFET |
| SSM3J327F | Silicon P-Channel MOSFET |
| SSM3J327R | Silicon P-Channel MOSFET |
| SSM3J328R | Silicon P-Channel MOSFET |
| SSM3J331R | Silicon P-Channel MOSFET |
