SSM3J356R
SSM3J356R is Silicon P-Channel MOSFET manufactured by Toshiba.
MOSFETs Silicon P-Channel MOS (U-MOS- )
1. Applications
- Power Management Switches
2. Features
(1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4 V gate drive voltage. (3) Low drain-source on-resistance
: RDS(ON) = 400 mΩ (max) (@VGS = -4.0 V) RDS(ON) = 300 mΩ (max) (@VGS = -10 V)
3. Packaging and Internal Circuit
1: Gate 2: Source 3: Drain
SOT-23F
4. Orderable part number
Orderable part number
AEC-Q101
Note
SSM3J356R,LF SSM3J356R,LXGF SSM3J356R,LXHF
- YES YES
(Note 1)
General Use Unintended Use Automotive Use
Note 1: For more information, please contact our sales or use the inquiry form on our website.
(Note 1)
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