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SSM3J356R - Silicon P-Channel MOSFET

Key Features

  • (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4 V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 400 mΩ (max) (@VGS = -4.0 V) RDS(ON) = 300 mΩ (max) (@VGS = -10 V) 3. Packaging and Internal Circuit SSM3J356R 1: Gate 2: Source 3: Drain SOT-23F 4. Orderable part number Orderable part number AEC-Q101 Note SSM3J356R,LF SSM3J356R,LXGF SSM3J356R,LXHF.
  • YES YES (Note 1) General Use Unintended Use Automotive Use Note 1: For more information, p.

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Datasheet Details

Part number SSM3J356R
Manufacturer Toshiba
File Size 325.60 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet SSM3J356R Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOSFETs Silicon P-Channel MOS (U-MOS�) SSM3J356R 1. Applications • Power Management Switches 2. Features (1) AEC-Q101 qualified (Please see the orderable part number list) (2) 4 V gate drive voltage. (3) Low drain-source on-resistance : RDS(ON) = 400 mΩ (max) (@VGS = -4.0 V) RDS(ON) = 300 mΩ (max) (@VGS = -10 V) 3. Packaging and Internal Circuit SSM3J356R 1: Gate 2: Source 3: Drain SOT-23F 4. Orderable part number Orderable part number AEC-Q101 Note SSM3J356R,LF SSM3J356R,LXGF SSM3J356R,LXHF � YES YES (Note 1) General Use Unintended Use Automotive Use Note 1: For more information, please contact our sales or use the inquiry form on our website. (Note 1) ©2016-2024 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2015-09 2024-07-23 Rev.9.