SSM3K35AFS - Silicon N-Channel MOSFET

Product Overview

Toshiba

Part number	SSM3K35AFS
Manufacturer	Toshiba
File Size	221.65 KB
Description	Silicon N-Channel MOSFET
Datasheet	SSM3K35AFS Datasheet
Additional preview pages of the SSM3K35AFS datasheet.

(1) 1.2 V drive (2) Low drain-source on-resistance : RDS(ON) = 9.0 Ω (max) (@VGS = 1.2 V, ID = 10 mA) RDS(ON) = 3.1 Ω (max) (@VGS = 1.5 V, ID = 20 mA) RDS(ON) = 2.4 Ω (max) (@VGS = 1.8 V, ID = 150 mA) RDS(ON) = 1.6 Ω (max) (@VGS = 2.5 V, ID = 150 mA) RDS(ON) = 1.1 Ω (max) (@VGS = 4.5 V, ID = 150 mA) 3. Packaging and Pin Assignment SSM SSM3K35AFS 1: Gate 2: Source 3: Drain ©2016 Toshiba Corporation 1 Start of commercial production 2016-10 2017-02-17 Rev.3.0 SSM3K35AFS 4. Absolute Maximum Ra.

📁 Similar Datasheet

Other Datasheets by Toshiba

Published: Dec 14, 2023 |