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SSM3K35MFV - Silicon N-Channel MOSFET

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SSM3K35MFV TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35MFV ○ High-Speed Switching Applications ○ Analog Switch Applications • 1.2 V drive • Low ON-resistance : Ron = 20 Ω (max) (@VGS = 1.2 V) : Ron = 8 Ω (max) (@VGS = 1.5 V) : Ron = 4 Ω (max) (@VGS = 2.5 V) : Ron = 3 Ω (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25˚C) 1.2±0.05 0.8±0.05 0.4 0.4 0.22±0.05 Unit: mm 1.2±0.05 0.8±0.05 1 2 3 0.32±0.05 0.13±0.05 0.5±0.05 Characteristic Symbol Rating Unit Drain–source voltage VDSS 20 V Gate–source voltage VGSS ±10 V Drain current DC ID Pulse IDP 180 mA 360 Drain power dissipation PD (Note 1) 150 mW Channel temperature Tch 150 °C Storage temperature Tstg −55 to 150 °C Note 1: Mounted on an FR4 board (25.4 mm × 25.4 mm × 1.
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