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SSM3K35CT - Silicon N-Channel MOSFET

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SSM3K35CT TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type SSM3K35CT ○ High-Speed Switching Applications ○ Analog Switch Applications Unit: mm • 1.2-V drive • Low ON-resistance : Ron = 20 Ω (max) (@VGS = 1.2 V) : Ron = 8 Ω (max) (@VGS = 1.5 V) : Ron = 4 Ω (max) (@VGS = 2.5 V) : Ron = 3 Ω (max) (@VGS = 4.0 V) Absolute Maximum Ratings (Ta = 25˚C) Characteristics Symbol Rating Unit Drain–source voltage VDSS 20 V Gate–source voltage VGSS ±10 V Drain current DC ID Pulse IDP 180 mA 360 Drain power dissipation PD(Note 1) 100 mW Channel temperature Storage temperature Tch 150 °C Tstg −55 to 150 °C JEDEC - Note: Using continuously under heavy loads (e.g.
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