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SSM5H90ATU Datasheet - Toshiba

Silicon N-Channel MOSFET

SSM5H90ATU Features

* (1) Combined an N-channel MOSFET and a diode in one package. 2.1. MOSFET Features (1) Low drain-source on-resistance : RDS(ON) = 65 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 89 mΩ (max) (@VGS = 2.5 V) (2) 2.5-V gate drive voltage. 2.2. Diode Features (1) Low reverse current: IR = 0.1 µA (typ.) (@VR = 30 V)

SSM5H90ATU Datasheet (234.78 KB)

Preview of SSM5H90ATU PDF

Datasheet Details

Part number:

SSM5H90ATU

Manufacturer:

Toshiba ↗

File Size:

234.78 KB

Description:

Silicon n-channel mosfet.

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SSM5H90ATU Silicon N-Channel MOSFET Toshiba

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