Datasheet Summary
posite Devices Silicon N-Channel MOS/Diode Epitaxial Planar
1. Applications
- High-Speed Switching
2. Features
(1) bined an N-channel MOSFET and a diode in one package.
2.1. MOSFET Features
(1) Low drain-source on-resistance : RDS(ON) = 65 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 89 mΩ (max) (@VGS = 2.5 V)
(2) 2.5-V gate drive voltage.
2.2. Diode Features
(1) Low reverse current: IR = 0.1 µA (typ.) (@VR = 30 V)
3. Packaging and Internal Circuit
1: Gate 2: Source 3: Anode 4: Cathode 5: Drain
4....