SSM5H90ATU mosfet equivalent, silicon n-channel mosfet.
(1) Combined an N-channel MOSFET and a diode in one package.
2.1. MOSFET Features
(1) Low drain-source on-resistance : RDS(ON) = 65 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 89 m.
* High-Speed Switching
2. Features
(1) Combined an N-channel MOSFET and a diode in one package.
2.1. MOSFET Features.
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