SSM5G06FE datasheet by Toshiba.
| Part number | SSM5G06FE |
|---|---|
| Datasheet | SSM5G06FE-Toshiba.pdf |
| File Size | 291.57 KB |
| Manufacturer | Toshiba |
| Description | Silicon Epitaxial Schottky Barrier Diode |
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SSM5G06FE Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode SSM5G06FE DC-DC Converter Applications bined a P-channel MOSFET and a Schottky barrier diode in one package. 3 mg (Typ.) Ratings (Ta = 25°C) MOSFET, SBD MON Characteristics Symbol Rating Unit Storage temperature range Operating temperature range Tstg −55 to 125 °C Topr (Note3) −40 to 100 °C Note: Using continuously under heavy loads (e.g.
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