SSM5G06FE
SSM5G06FE is Silicon Epitaxial Schottky Barrier Diode manufactured by Toshiba.
Silicon P-Channel MOS Type / Silicon Epitaxial Schottky Barrier Diode
DC-DC Converter Applications
- bined a P-channel MOSFET and a Schottky barrier diode in one package.
- Optimum for high-density mounting in small packages
Absolute Maximum Ratings (Ta = 25°C) MOSFET
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDSS
- 20
Gate-Source voltage
VGSS
±10
Drain current
- 100 m A
Pulse IDP (Note 2)
- 200
Power dissipation
PD (Note 1)
150 m W
Channel temperature
Tch
°C
Absolute Maximum Ratings (Ta = 25°C) SBD
Characteristics
Symbol
Rating
Unit
Maximum (peak) reverse voltage Reverse voltage Average forward current Peak one cycle surge forward current (10ms) Junction temperature
VRM VR IO IFSM Tj
100 m A
1 (50...
