SSM5H90ATU
SSM5H90ATU is Silicon N-Channel MOSFET manufactured by Toshiba.
Features
(1) bined an N-channel MOSFET and a diode in one package.
2.1. MOSFET Features
(1) Low drain-source on-resistance : RDS(ON) = 65 mΩ (max) (@VGS = 4.0 V) RDS(ON) = 89 mΩ (max) (@VGS = 2.5 V)
(2) 2.5-V gate drive voltage.
2.2. Diode Features
(1) Low reverse current: IR = 0.1 µA (typ.) (@VR = 30 V)
3. Packaging and Internal Circuit
1: Gate 2: Source 3: Anode 4: Cathode 5: Drain
4. Absolute Maximum Ratings (Note)
4.1. Absolute Maximum Ratings of the MOSFET (Unless otherwise specified, Ta = 25 )
Characteristics
Symbol
Rating
Unit
Drain-source voltage
Gate-source voltage
Drain current
(Note 1)
Drain current (pulsed)
(Note 1)
Channel temperature
Note 1: Ensure that the channel temperature does not exceed 150 .
VDSS VGSS
ID IDP Tch
±10
Start of mercial production
2012-03
2014-04-04
Rev.3.0
4.2. Absolute Maximum Ratings of the Diode (Unless otherwise specified, Ta = 25 )
Characteristics
Peak reverse voltage Reverse voltage Peak forward current Average rectified current Non-repetitive peak forward surge current Junction temperature
(t = 10...
