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SSM6J512NU - Silicon P-Channel MOSFET

Features

  • (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 24.0 mΩ (typ. ) (@VGS = -1.8 V) RDS(ON) = 18.3 mΩ (typ. ) (@VGS = -2.5 V) RDS(ON) = 14.3 mΩ (typ. ) (@VGS = -4.5 V) 3. Packaging and Pin Assignment UDFN6B SSM6J512NU 1,2,5,6: Drain 3: Gate 4: Source ©2015-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2015-07 2021-09-17 Rev.2.0 SSM6J512NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25.
  • ) Character.

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Datasheet Details

Part number SSM6J512NU
Manufacturer Toshiba
File Size 437.09 KB
Description Silicon P-Channel MOSFET
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MOSFETs Silicon P-Channel MOS SSM6J512NU 1. Applications • Power Management Switches 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 24.0 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 18.3 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 14.3 mΩ (typ.) (@VGS = -4.5 V) 3. Packaging and Pin Assignment UDFN6B SSM6J512NU 1,2,5,6: Drain 3: Gate 4: Source ©2015-2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2015-07 2021-09-17 Rev.2.0 SSM6J512NU 4.
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