SSM6J512NU mosfet equivalent, silicon p-channel mosfet.
(1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) = 24.0 mΩ (typ.) (@VGS = -1.8 V) RDS(ON) = 18.3 mΩ (typ.) (@VGS = -2.5 V) RDS(ON) = 14.3 mΩ (ty.
* Power Management Switches
2. Features
(1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance
: RDS(ON) =.
Image gallery
Download