SSM6J511NU - Silicon P-Channel MOSFET

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Toshiba

Part number	SSM6J511NU
Manufacturer	Toshiba
File Size	295.07 KB
Description	Silicon P-Channel MOSFET
Datasheet	SSM6J511NU Datasheet
Additional preview pages of the SSM6J511NU datasheet.

(1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 13.5 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 10 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Assignment UDFN6B SSM6J511NU 1.2.5.6 Drain 3. Gate 4. Source ©2016 Toshiba Corporation 1 Start of commercial production 2015-12 2017-04-18 Rev.3.0 SSM6J511NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS -12 V Gate-source voltage.

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Published: Jul 27, 2019 |