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SSM6J511NU - Silicon P-Channel MOSFET

Features

  • (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 13.5 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 10 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Assignment UDFN6B SSM6J511NU 1.2.5.6 Drain 3. Gate 4. Source ©2016 Toshiba Corporation 1 Start of commercial production 2015-12 2017-04-18 Rev.3.0 SSM6J511NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS -12 V Gate-source voltage.

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Datasheet Details

Part number SSM6J511NU
Manufacturer Toshiba
File Size 295.07 KB
Description Silicon P-Channel MOSFET
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Full PDF Text Transcription

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MOSFETs Silicon P-Channel MOS (U-MOS) SSM6J511NU 1. Applications • Power Management Switches 2. Features (1) 1.8 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 13.5 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 10 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Assignment UDFN6B SSM6J511NU 1.2.5.6 Drain 3. Gate 4. Source ©2016 Toshiba Corporation 1 Start of commercial production 2015-12 2017-04-18 Rev.3.0 SSM6J511NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS -12 V Gate-source voltage VGSS ±10 Drain current (DC) (Note 1) ID -14 A Drain current (pulsed) (Note 1), (Note 2) IDP -40 Power dissipation (Note 3) PD 1.25 W Power dissipation (t ≤ 10 s) (Note 3) PD 2.
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