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SSM6J51TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ)
SSM6J51TU
High Current Switching Applications
Unit: mm
• Suitable for high-density mounting due to compact package
• Low on-resistance:
Ron = 54 mΩ (max) (@VGS = -2.5 V) 85 mΩ (max) (@VGS = -1.8 V) 150mΩ(max) (@VGS = -1.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
-12
V
Gate-Source voltage
VGSS
±8
V
Drain current
DC
ID
Pulse
IDP
-4 A
-8
1,2,5,6 : Drain
3
: Gate
4
: Source
Drain power dissipation
PD (Note 1)
500
mW
Channel temperature Storage temperature range
Tch
150
°C
JEDEC
-
Tstg
−55~150
°C
JEITA
-
Note:
Using continuously under heavy loads (e.g.
SSM6J51TU Datasheet
