SSM6J51TU Description
SSM6J51TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅣ) SSM6J51TU High Current Switching Applications Unit: mm Suitable for high-density mounting due to pact package Low on-resistance: Source Drain power dissipation PD (Note 1) 500 mW Channel temperature Storage temperature range Tch 150 °C JEDEC - Tstg −55~150 °C JEITA - Note:.