Datasheet4U Logo Datasheet4U.com

SSM6J502NU Datasheet Silicon P-channel MOSFET

Manufacturer: Toshiba

Overview: MOSFETs Silicon P-Channel MOS (U-MOS�) SSM6J502NU 1. Applications • Power Management Switches 2.

Key Features

  • (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 60.5 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 38.4 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 28.3 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 23.1 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Internal Circuit UDFN6B SSM6J502NU 1,2,5,6: Drain 3: Gate 4: Source ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2010-11 2021-11-30 Rev.2.0 SSM6J502NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta =.

SSM6J502NU Distributor