Datasheet4U Logo Datasheet4U.com

SSM6J502NU - Silicon P-Channel MOSFET

Features

  • (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 60.5 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 38.4 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 28.3 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 23.1 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Internal Circuit UDFN6B SSM6J502NU 1,2,5,6: Drain 3: Gate 4: Source ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2010-11 2021-11-30 Rev.2.0 SSM6J502NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta =.

📥 Download Datasheet

Datasheet preview – SSM6J502NU

Datasheet Details

Part number SSM6J502NU
Manufacturer Toshiba Semiconductor
File Size 429.56 KB
Description Silicon P-Channel MOSFET
Datasheet download datasheet SSM6J502NU Datasheet
Additional preview pages of the SSM6J502NU datasheet.

📁 Similar Datasheet

Other Datasheets by Toshiba Semiconductor

Full PDF Text Transcription

Click to expand full text
MOSFETs Silicon P-Channel MOS (U-MOS�) SSM6J502NU 1. Applications • Power Management Switches 2. Features (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 60.5 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 38.4 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 28.3 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 23.1 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Internal Circuit UDFN6B SSM6J502NU 1,2,5,6: Drain 3: Gate 4: Source ©2021 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2010-11 2021-11-30 Rev.2.0 SSM6J502NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS -20 V VGSS ±8 V Drain current (DC) (Note 1) ID -6.
Published: |