Datasheet Summary
MOSFETs Silicon P-Channel MOS (U-MOS- )
1. Applications
- Power Management Switches
2. Features
(1) 1.5-V drive (2) Low drain-source on-resistance
: RDS(ON) = 60.5 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 38.4 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 28.3 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 23.1 mΩ (max) (@VGS = -4.5 V)
3. Packaging and Internal Circuit
UDFN6B
1,2,5,6: Drain 3: Gate 4: Source
©2021
Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2010-11
2021-11-30 Rev.2.0
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