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SSM6J503NU - Silicon P-Channel MOSFET

Features

  • (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 89.6 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 57.9 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 41.7 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 32.4 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Assignment UDFN6B SSM6J503NU 1,2,5,6: Drain 3: Gate 4: Source ©2021-2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2010-11 2025-05-09 Rev.1.0 SSM6J503NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta.

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Datasheet Details

Part number SSM6J503NU
Manufacturer Toshiba Semiconductor
File Size 475.72 KB
Description Silicon P-Channel MOSFET
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MOSFETs Silicon P-Channel MOS (U-MOS�) SSM6J503NU 1. Applications • Power Management Switches 2. Features (1) 1.5-V drive (2) Low drain-source on-resistance : RDS(ON) = 89.6 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 57.9 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 41.7 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 32.4 mΩ (max) (@VGS = -4.5 V) 3. Packaging and Pin Assignment UDFN6B SSM6J503NU 1,2,5,6: Drain 3: Gate 4: Source ©2021-2025 1 Toshiba Electronic Devices & Storage Corporation Start of commercial production 2010-11 2025-05-09 Rev.1.0 SSM6J503NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 �) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage VDSS -20 V VGSS ±8 V Drain current (DC) (Note 1) ID -6.
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