Datasheet Summary
MOSFETs Silicon P-Channel MOS (U-MOS- )
1. Applications
- Power Management Switches
2. Features
(1) 1.5-V drive (2) Low drain-source on-resistance
: RDS(ON) = 89.6 mΩ (max) (@VGS = -1.5 V) RDS(ON) = 57.9 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 41.7 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 32.4 mΩ (max) (@VGS = -4.5 V)
3. Packaging and Pin Assignment
UDFN6B
1,2,5,6: Drain 3: Gate 4: Source
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Toshiba Electronic Devices & Storage Corporation
Start of mercial production
2010-11
2025-05-09 Rev.1.0
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