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SSM6J50TU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)
SSM6J50TU
○ High Current Switching Applications
Unit: mm
• Compact package suitable for high-density mounting
• Low on-resistance:
Ron = Ron = Ron =
205mΩ (max) (@VGS = -2.0 V) 100mΩ (max) (@VGS = -2.5 V)
64mΩ (max) (@VGS = -4.5 V)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDS
-20
V
Gate-Source voltage
VGSS
±10
V
Drain current
DC
ID
-2.5
A
Pulse
IDP
-5
1,2,5,6 : Drain
3
: Gate
4
: Source
Drain power dissipation Channel temperature
PD
500
mW
(Note 1)
Tch
150
°C
JEDEC
-
Storage temperature range
Tstg
−55 to 150
°C
JEITA
-
Note:
Using continuously under heavy loads (e.g.
SSM6J50TU Datasheet
