SSM6J50TU Description
SSM6J50TU TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ) SSM6J50TU ○ High Current Switching Applications Unit: mm pact package suitable for high-density mounting Low on-resistance: Source Drain power dissipation Channel temperature PD 500 mW (Note 1) Tch 150 °C JEDEC - Storage temperature range Tstg −55 to 150 °C JEITA - Note:.