Datasheet Summary
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (U-MOSⅢ)
○ High Current Switching Applications
Unit: mm
- pact package suitable for high-density mounting
- Low on-resistance:
Ron = Ron = Ron =
205mΩ (max) (@VGS = -2.0 V) 100mΩ (max) (@VGS = -2.5 V)
64mΩ (max) (@VGS = -4.5...
