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SSM6J507NU - Silicon P-Channel MOSFET

Features

  • (1) 4 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 20 mΩ (max) (@VGS = -10 V) RDS(ON) = 28 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 32 mΩ (max) (@VGS = -4.0 V) 3. Packaging and Pin Assignment UDFN6B SSM6J507NU 1.2.5.6 Drain 3. Gate 4. Source ©2015 Toshiba Corporation 1 Start of commercial production 2015-05 2015-11-10 Rev.2.0 SSM6J507NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage.

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Datasheet Details

Part number SSM6J507NU
Manufacturer Toshiba
File Size 240.12 KB
Description Silicon P-Channel MOSFET
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MOSFETs Silicon P-Channel MOS (U-MOS) SSM6J507NU 1. Applications • Power Management Switches 2. Features (1) 4 V gate drive voltage. (2) Low drain-source on-resistance : RDS(ON) = 20 mΩ (max) (@VGS = -10 V) RDS(ON) = 28 mΩ (max) (@VGS = -4.5 V) RDS(ON) = 32 mΩ (max) (@VGS = -4.0 V) 3. Packaging and Pin Assignment UDFN6B SSM6J507NU 1.2.5.6 Drain 3. Gate 4. Source ©2015 Toshiba Corporation 1 Start of commercial production 2015-05 2015-11-10 Rev.2.0 SSM6J507NU 4. Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25 ) Characteristics Symbol Rating Unit Drain-source voltage VDSS -30 V Gate-source voltage VGSS -25 / +20 Drain current (DC) (Note 1) ID -10 A Drain current (pulsed) (Note 1), (Note 2) IDP -30 Power dissipation (Note 3) PD 1.
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