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SSM6J501NU
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type(U-MOSⅥ)
SSM6J501NU
Power Management Switch Applications
• 1.5V drive • Low ON-resistance: RDS(ON) = 43.0 mΩ (max) (@VGS = -1.5 V)
RDS(ON) = 26.5 mΩ (max) (@VGS = -1.8 V) RDS(ON) = 19.0 mΩ (max) (@VGS = -2.5 V) RDS(ON) = 15.3 mΩ (max) (@VGS = -4.5 V)
Unit: mm
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
VDSS
−20
V
Gate-Source voltage
VGSS
±8
V
Drain current
DC
ID
−10
A
Pulse
IDP (Note 1)
−30
Power dissipation
PD(Note 2)
1
W
t≦10s
2
Channel temperature
Tch
150
°C
Storage temperature
Tstg
−55 to 150
°C
1,2,5,6: Drain
Note: Using continuously under heavy loads (e.g.
SSM6J501NU Datasheet
